Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5820US
Manufacturer Part Number | 1N5820US |
---|---|
Future Part Number | FT-1N5820US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5820US Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 500mV @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 20V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 125°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5820US Weight | Contact Us |
Replacement Part Number | 1N5820US-FT |
1N6675
Microsemi Corporation
1N6676
Microsemi Corporation
DSB0.2A20
Microsemi Corporation
DSB0.2A40
Microsemi Corporation
DSB0.5A20
Microsemi Corporation
DSB0.5A30
Microsemi Corporation
DSB0.5A40
Microsemi Corporation
DSB2810
Microsemi Corporation
DSB3A20
Microsemi Corporation
DSB3A30
Microsemi Corporation
LCMXO1200E-3T100C
Lattice Semiconductor Corporation
MPF300TS-1FCG484I
Microsemi Corporation
EP1S20F672C6
Intel
EPF10K100ABI600-2
Intel
EP3C25F256A7N
Intel
5SGXMA4K2F40C1N
Intel
10CL016ZE144I8G
Intel
5AGXMA3D4F27I3N
Intel
A54SX08A-TQG100
Microsemi Corporation
5CGTFD9C5F23I7N
Intel