Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N3417_D26Z
Manufacturer Part Number | 2N3417_D26Z |
---|---|
Future Part Number | FT-2N3417_D26Z |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N3417_D26Z Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 4.5V |
Power - Max | 625mW |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N3417_D26Z Weight | Contact Us |
Replacement Part Number | 2N3417_D26Z-FT |
BC636TA
ON Semiconductor
PN2907ATA
ON Semiconductor
BC557BTF
ON Semiconductor
BC547BTF
ON Semiconductor
BC546CTA
ON Semiconductor
KSA1013OTA
ON Semiconductor
2N4403TAR
ON Semiconductor
KSD471ACYTA
ON Semiconductor
KSP43TA
ON Semiconductor
2N6517CTA
ON Semiconductor
LFXP2-5E-6TN144I
Lattice Semiconductor Corporation
XC3S1200E-5FT256C
Xilinx Inc.
AGL600V5-FGG256I
Microsemi Corporation
A54SX08A-2PQG208
Microsemi Corporation
ICE40LP1K-QN84
Lattice Semiconductor Corporation
LFE5U-85F-8BG756C
Lattice Semiconductor Corporation
EP2AGX260EF29I5N
Intel
EPF10K50VBI356-4
Intel
EP20K160EQC240-3N
Intel
EPF10K30EQC208-2N
Intel