Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2N7002ET1G
Manufacturer Part Number | 2N7002ET1G |
---|---|
Future Part Number | FT-2N7002ET1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N7002ET1G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 240mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.81nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 26.7pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300mW (Tj) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N7002ET1G Weight | Contact Us |
Replacement Part Number | 2N7002ET1G-FT |
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