Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SA1179N6-TB-E
Manufacturer Part Number | 2SA1179N6-TB-E |
---|---|
Future Part Number | FT-2SA1179N6-TB-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SA1179N6-TB-E Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1mA, 6V |
Power - Max | 200mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-CP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SA1179N6-TB-E Weight | Contact Us |
Replacement Part Number | 2SA1179N6-TB-E-FT |
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