Manufacturer Part Number | 2SD2017 |
---|---|
Future Part Number | FT-2SD2017 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SD2017 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 6A |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 2A |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
Power - Max | 35W |
Frequency - Transition | 20MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Supplier Device Package | TO-220F |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD2017 Weight | Contact Us |
Replacement Part Number | 2SD2017-FT |
2N5657
STMicroelectronics
2N6039
STMicroelectronics
2SB772
STMicroelectronics
BD235
STMicroelectronics
BD238
STMicroelectronics
BD434
STMicroelectronics
BD436
STMicroelectronics
BD437
STMicroelectronics
BULT118
STMicroelectronics
BULT118M
STMicroelectronics
A54SX16A-2FG256I
Microsemi Corporation
LCMXO640E-3FTN256I
Lattice Semiconductor Corporation
EP2C50F672C7N
Intel
EP3C5U256C7
Intel
5SGXEA9N3F45C2N
Intel
XC7VX485T-3FFG1157E
Xilinx Inc.
XC2V8000-5FFG1152I
Xilinx Inc.
LCMXO3L-9400E-5BG256C
Lattice Semiconductor Corporation
EP3SL50F780C3
Intel
EP1C4F400I7N
Intel