Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SJ665-DL-E
Manufacturer Part Number | 2SJ665-DL-E |
---|---|
Future Part Number | FT-2SJ665-DL-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SJ665-DL-E Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 77 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SMP-FD |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SJ665-DL-E Weight | Contact Us |
Replacement Part Number | 2SJ665-DL-E-FT |
IRL3705NSTRLPBF
Infineon Technologies
IRL540NSTRLPBF
Infineon Technologies
IRL7833STRLPBF
Infineon Technologies
IRLS4030TRLPBF
Infineon Technologies
AUIRFS8407
Infineon Technologies
AUIRF3710ZS
Infineon Technologies
BUZ31 H3045A
Infineon Technologies
IPB015N04NGATMA1
Infineon Technologies
IPB027N10N5ATMA1
Infineon Technologies
IPB029N06N3GATMA1
Infineon Technologies
A54SX32-1TQ144M
Microsemi Corporation
LFXP3E-3T100I
Lattice Semiconductor Corporation
A3P400-2FGG256I
Microsemi Corporation
LCMXO2-256HC-4SG32I
Lattice Semiconductor Corporation
LFE5UM-85F-7BG554C
Lattice Semiconductor Corporation
A3P125-1VQG100
Microsemi Corporation
EP2C15AF484C8N
Intel
5SGXEB6R3F40I3L
Intel
XC4036XL-3HQ208C
Xilinx Inc.
XC6SLX45-L1CSG324C
Xilinx Inc.