Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT25GP120BG
Manufacturer Part Number | APT25GP120BG |
---|---|
Future Part Number | FT-APT25GP120BG |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | POWER MOS 7® |
APT25GP120BG Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 69A |
Current - Collector Pulsed (Icm) | 90A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
Power - Max | 417W |
Switching Energy | 500µJ (on), 438µJ (off) |
Input Type | Standard |
Gate Charge | 110nC |
Td (on/off) @ 25°C | 12ns/70ns |
Test Condition | 600V, 25A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT25GP120BG Weight | Contact Us |
Replacement Part Number | APT25GP120BG-FT |
RJH60F3DPQ-A0#T0
Renesas Electronics America
RJH60D5BDPQ-E0#T2
Renesas Electronics America
RJH60F6BDPQ-A0#T0
Renesas Electronics America
RJH60F6DPQ-A0#T0
Renesas Electronics America
RJH1BF6RDPQ-80#T2
Renesas Electronics America
RJH1BF7RDPQ-80#T2
Renesas Electronics America
RJH1CF4RDPQ-80#T2
Renesas Electronics America
RJH1CF5RDPQ-80#T2
Renesas Electronics America
RJH1CF6RDPQ-80#T2
Renesas Electronics America
RJH1CF7RDPQ-80#T2
Renesas Electronics America
LCMXO640E-4T100C
Lattice Semiconductor Corporation
XA3SD1800A-4FGG676I
Xilinx Inc.
EP2C5F256I8N
Intel
5CGXFC7B6M15I7N
Intel
5SGSMD8N3F45I3N
Intel
XC7S15-1CSGA225C
Xilinx Inc.
A42MX24-TQ176M
Microsemi Corporation
A42MX16-FPQG160
Microsemi Corporation
A54SX08-1FGG144I
Microsemi Corporation
EP4CE40F29I8LN
Intel