Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AUIRF1018ES
Manufacturer Part Number | AUIRF1018ES |
---|---|
Future Part Number | FT-AUIRF1018ES |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
AUIRF1018ES Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AUIRF1018ES Weight | Contact Us |
Replacement Part Number | AUIRF1018ES-FT |
IPB100N04S303ATMA1
Infineon Technologies
IPB100N06S205ATMA4
Infineon Technologies
IPB120N04S401ATMA1
Infineon Technologies
IPB123N10N3GATMA1
Infineon Technologies
IPB320N20N3GATMA1
Infineon Technologies
IPB60R099C6ATMA1
Infineon Technologies
IPB60R125C6ATMA1
Infineon Technologies
IPB60R165CPATMA1
Infineon Technologies
IPB65R065C7ATMA2
Infineon Technologies
IPB70N10S312ATMA1
Infineon Technologies
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel