Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / BAV19WS-TP
Manufacturer Part Number | BAV19WS-TP |
---|---|
Future Part Number | FT-BAV19WS-TP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BAV19WS-TP Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 200mA |
Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 50ns |
Current - Reverse Leakage @ Vr | 100nA @ 100V |
Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Operating Temperature - Junction | -65°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BAV19WS-TP Weight | Contact Us |
Replacement Part Number | BAV19WS-TP-FT |
EGF1T-E3/67A
Vishay Semiconductor Diodes Division
EGF1THE3/5CA
Vishay Semiconductor Diodes Division
EGF1THE3/67A
Vishay Semiconductor Diodes Division
GF1A/67A
Vishay Semiconductor Diodes Division
GF1B/17A
Vishay Semiconductor Diodes Division
GF1BHE3/67A
Vishay Semiconductor Diodes Division
GF1DHE3/5CA
Vishay Semiconductor Diodes Division
GF1DHE3/67A
Vishay Semiconductor Diodes Division
GF1G-E3/5CA
Vishay Semiconductor Diodes Division
GF1G/1754
Vishay Semiconductor Diodes Division
XC7S100-1FGGA484C
Xilinx Inc.
M1A3P1000-2FG256
Microsemi Corporation
LFE2M70E-6F1152C
Lattice Semiconductor Corporation
AT6003-2AI
Microchip Technology
EP1S20F484I6N
Intel
XC2VP40-6FFG1152C
Xilinx Inc.
AT6003-2JC
Microchip Technology
10AX115S2F45I2LG
Intel
EPF10K100ABC356-3
Intel
EP1C12F324C6
Intel