Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BD13910S
Manufacturer Part Number | BD13910S |
---|---|
Future Part Number | FT-BD13910S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BD13910S Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1.5A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
Power - Max | 1.25W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BD13910S Weight | Contact Us |
Replacement Part Number | BD13910S-FT |
FJD3076TF
ON Semiconductor
KSH112GTM
ON Semiconductor
KSH112GTM_NB82051
ON Semiconductor
KSH112GTM_SB82051
ON Semiconductor
KSH112TF
ON Semiconductor
KSH117TM
ON Semiconductor
KSH29ITU
ON Semiconductor
KSH30TF
ON Semiconductor
KSH31CTM
ON Semiconductor
KSH31TF
ON Semiconductor
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel