Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BD13910S
Manufacturer Part Number | BD13910S |
---|---|
Future Part Number | FT-BD13910S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BD13910S Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1.5A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
Power - Max | 1.25W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BD13910S Weight | Contact Us |
Replacement Part Number | BD13910S-FT |
FJD3076TF
ON Semiconductor
KSH112GTM
ON Semiconductor
KSH112GTM_NB82051
ON Semiconductor
KSH112GTM_SB82051
ON Semiconductor
KSH112TF
ON Semiconductor
KSH117TM
ON Semiconductor
KSH29ITU
ON Semiconductor
KSH30TF
ON Semiconductor
KSH31CTM
ON Semiconductor
KSH31TF
ON Semiconductor
A54SX16A-2FG256I
Microsemi Corporation
LCMXO640E-3FTN256I
Lattice Semiconductor Corporation
EP2C50F672C7N
Intel
EP3C5U256C7
Intel
5SGXEA9N3F45C2N
Intel
XC7VX485T-3FFG1157E
Xilinx Inc.
XC2V8000-5FFG1152I
Xilinx Inc.
LCMXO3L-9400E-5BG256C
Lattice Semiconductor Corporation
EP3SL50F780C3
Intel
EP1C4F400I7N
Intel