Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BFR182E6327HTSA1
Manufacturer Part Number | BFR182E6327HTSA1 |
---|---|
Future Part Number | FT-BFR182E6327HTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BFR182E6327HTSA1 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
Gain | 12dB ~ 18dB |
Power - Max | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BFR182E6327HTSA1 Weight | Contact Us |
Replacement Part Number | BFR182E6327HTSA1-FT |
BFP420H6433XTMA1
Infineon Technologies
BFP420H6740XTSA1
Infineon Technologies
BFP420H6801XTSA1
Infineon Technologies
BFP450H6327XTSA1
Infineon Technologies
BFP450H6433XTMA1
Infineon Technologies
BFP460H6327XTSA1
Infineon Technologies
BFP540ESDH6327XTSA1
Infineon Technologies
BFP620H7764XTSA1
Infineon Technologies
BFP640H6327XTSA1
Infineon Technologies
BFP720ESDH6327XTSA1
Infineon Technologies