Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BYM600A170DN2HOSA1
Manufacturer Part Number | BYM600A170DN2HOSA1 |
---|---|
Future Part Number | FT-BYM600A170DN2HOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BYM600A170DN2HOSA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | - |
Current - Collector (Ic) (Max) | - |
Power - Max | 1400W |
Vce(on) (Max) @ Vge, Ic | - |
Current - Collector Cutoff (Max) | - |
Input Capacitance (Cies) @ Vce | - |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYM600A170DN2HOSA1 Weight | Contact Us |
Replacement Part Number | BYM600A170DN2HOSA1-FT |
APTGT75DSK60T3G
Microsemi Corporation
APTGT75SK120D1G
Microsemi Corporation
APTGT75SK120T1G
Microsemi Corporation
APTGT75SK170D1G
Microsemi Corporation
APTGT75SK60T1G
Microsemi Corporation
APTGT75TA60PG
Microsemi Corporation
APTGV100H60BTPG
Microsemi Corporation
APTGV100H60T3G
Microsemi Corporation
APTGV15H120T3G
Microsemi Corporation
APTGV25H120BG
Microsemi Corporation
LCMXO2-256HC-4TG100C
Lattice Semiconductor Corporation
M1AGLE3000V5-FGG484
Microsemi Corporation
A3P1000-2FG256I
Microsemi Corporation
EPF10K250EFI672-3
Intel
5SGXMA3E2H29C3N
Intel
EP3SL110F1152I4LN
Intel
XA7A35T-1CSG324Q
Xilinx Inc.
5CEFA7U19C6N
Intel
5CEFA7F31C7N
Intel
10AX066K2F40I2LG
Intel