Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRC2643T0L
Manufacturer Part Number | DRC2643T0L |
---|---|
Future Part Number | FT-DRC2643T0L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DRC2643T0L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 80mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DRC2643T0L Weight | Contact Us |
Replacement Part Number | DRC2643T0L-FT |
UNR221E00L
Panasonic Electronic Components
BCR533E6327HTSA1
Infineon Technologies
UNR221M00L
Panasonic Electronic Components
FJV3114RMTF
ON Semiconductor
BCR183E6327HTSA1
Infineon Technologies
UNR211V00L
Panasonic Electronic Components
BCR142E6327HTSA1
Infineon Technologies
BCR198E6327HTSA1
Infineon Technologies
BCR512E6327HTSA1
Infineon Technologies
BCR555E6327HTSA1
Infineon Technologies
A3P030-1QNG68
Microsemi Corporation
M2GL050S-1FGG484I
Microsemi Corporation
LFE2-70E-5F900I
Lattice Semiconductor Corporation
10M50DAF256C6GES
Intel
5SGSMD4K3F40I3N
Intel
XC7VX415T-3FFG1157E
Xilinx Inc.
XC6VLX550T-2FFG1760C
Xilinx Inc.
LCMXO2-4000HE-6BG332C
Lattice Semiconductor Corporation
LCMXO2-640ZE-2MG132I
Lattice Semiconductor Corporation
EP20K100EQC240-1N
Intel