Home / Products / Integrated Circuits (ICs) / Memory / DS1230AB-200IND
Manufacturer Part Number | DS1230AB-200IND |
---|---|
Future Part Number | FT-DS1230AB-200IND |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DS1230AB-200IND Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | NVSRAM |
Technology | NVSRAM (Non-Volatile SRAM) |
Memory Size | 256Kb (32K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 200ns |
Access Time | 200ns |
Memory Interface | Parallel |
Voltage - Supply | 4.75V ~ 5.25V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package | 28-EDIP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DS1230AB-200IND Weight | Contact Us |
Replacement Part Number | DS1230AB-200IND-FT |
MR2A16AVMA35R
Everspin Technologies Inc.
MR0A08BCMA35
Everspin Technologies Inc.
MR0A08BCMA35R
Everspin Technologies Inc.
MR0A08BMA35
Everspin Technologies Inc.
MR0A08BMA35R
Everspin Technologies Inc.
MR0D08BMA45R
Everspin Technologies Inc.
MR0DL08BMA45
Everspin Technologies Inc.
MR0DL08BMA45R
Everspin Technologies Inc.
MR256A08BCMA35R
Everspin Technologies Inc.
MR256A08BMA35
Everspin Technologies Inc.
XC6SLX150T-2FGG484I
Xilinx Inc.
M1A3P400-2PQG208
Microsemi Corporation
LFE5UM-85F-7BG756C
Lattice Semiconductor Corporation
XC2V1500-4BGG575C
Xilinx Inc.
AX500-FGG676
Microsemi Corporation
LFX200EB-05FN256C
Lattice Semiconductor Corporation
LFE2M35E-5FN256C
Lattice Semiconductor Corporation
LFE2-12SE-6FN484C
Lattice Semiconductor Corporation
5CEBA9F31C8N
Intel
EP20K1000EBI652-2X
Intel