Manufacturer Part Number | FDG329N |
---|---|
Future Part Number | FT-FDG329N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | PowerTrench® |
FDG329N Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 420mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-88 (SC-70-6) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDG329N Weight | Contact Us |
Replacement Part Number | FDG329N-FT |
TK7A65W,S5X
Toshiba Semiconductor and Storage
TK7A90E,S4X
Toshiba Semiconductor and Storage
TK8A60W,S4VX
Toshiba Semiconductor and Storage
TK8A65W,S5X
Toshiba Semiconductor and Storage
TK9A65W,S5X
Toshiba Semiconductor and Storage
ZDX130N50
Rohm Semiconductor
DMN90H8D5HCT
Diodes Incorporated
DMT10H010LCT
Diodes Incorporated
DMT6009LCT
Diodes Incorporated
DMN95H8D5HCT
Diodes Incorporated
LFXP3C-3TN100C
Lattice Semiconductor Corporation
XC2V4000-5FF1517I
Xilinx Inc.
A54SX72A-FGG256
Microsemi Corporation
M2GL025TS-VFG256
Microsemi Corporation
EP4CGX30CF23I7
Intel
5SGSED8N3F45I3LN
Intel
5SGXEB5R1F43I2N
Intel
AGL1000V5-FGG144I
Microsemi Corporation
LFE2M70SE-6FN900I
Lattice Semiconductor Corporation
EP4SGX70HF35C2G
Intel