Manufacturer Part Number | FDN357N |
---|---|
Future Part Number | FT-FDN357N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FDN357N Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDN357N Weight | Contact Us |
Replacement Part Number | FDN357N-FT |
SI2318A-TP
Micro Commercial Co
SI2369DS-T1-GE3
Vishay Siliconix
SQ2389ES-T1_GE3
Vishay Siliconix
2N7002KA-TP
Micro Commercial Co
2SK1828TE85LF
Toshiba Semiconductor and Storage
SI2301A-TP
Micro Commercial Co
SI2302CDS-T1-GE3
Vishay Siliconix
SI2324A-TP
Micro Commercial Co
SI2328DS-T1-GE3
Vishay Siliconix
SQ2319ADS-T1_GE3
Vishay Siliconix
EX64-TQ100I
Microsemi Corporation
M2GL090T-FCSG325I
Microsemi Corporation
M1AFS600-2FG256I
Microsemi Corporation
5SGXMA7N2F40I3N
Intel
XCS05-3PC84C
Xilinx Inc.
XC2V4000-5FFG1152I
Xilinx Inc.
AGL600V5-FGG144
Microsemi Corporation
EP3SL150F780C4LN
Intel
EPF10K30RC240-4N
Intel
EP1S60F1020C5N
Intel