Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FS100R07N2E4BOSA1
Manufacturer Part Number | FS100R07N2E4BOSA1 |
---|---|
Future Part Number | FT-FS100R07N2E4BOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FS100R07N2E4BOSA1 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 100A |
Power - Max | 335W |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 100A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 6.2nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FS100R07N2E4BOSA1 Weight | Contact Us |
Replacement Part Number | FS100R07N2E4BOSA1-FT |
FP7G50US60
ON Semiconductor
FP7G100US60
ON Semiconductor
EX64-TQ64A
Microsemi Corporation
EPF8820ATC144-2N
Intel
LFE2-12SE-6T144C
Lattice Semiconductor Corporation
LFE3-35EA-6FTN256I
Lattice Semiconductor Corporation
5SGXEA7K3F40I3LN
Intel
5SGXMA7N2F45C3N
Intel
XC7VX690T-2FFG1158I
Xilinx Inc.
XC7V585T-2FFG1761C
Xilinx Inc.
M2GL060-1FGG676
Microsemi Corporation
5AGXFA5H4F35C5N
Intel