Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ2501-05-G
Manufacturer Part Number | GBJ2501-05-G |
---|---|
Future Part Number | FT-GBJ2501-05-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ2501-05-G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 100V |
Current - Average Rectified (Io) | 4.2A |
Voltage - Forward (Vf) (Max) @ If | 1V @ 12.5A |
Current - Reverse Leakage @ Vr | 10µA @ 100V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-SIP, GBJ |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ2501-05-G Weight | Contact Us |
Replacement Part Number | GBJ2501-05-G-FT |
PBPC1005
Diodes Incorporated
PBPC1006
Diodes Incorporated
PBPC1007
Diodes Incorporated
PBPC801
Diodes Incorporated
PBPC802
Diodes Incorporated
PBPC803
Diodes Incorporated
PBPC804
Diodes Incorporated
PBPC805
Diodes Incorporated
PBPC806
Diodes Incorporated
PBPC807
Diodes Incorporated
XC3S500E-5FTG256C
Xilinx Inc.
M1A3P1000-FG256I
Microsemi Corporation
M1A3P1000-PQ208I
Microsemi Corporation
EP3SE260F1517I3
Intel
XC2VP50-5FFG1152I
Xilinx Inc.
LFEC10E-3FN484C
Lattice Semiconductor Corporation
LFE2M35SE-6FN484C
Lattice Semiconductor Corporation
LCMXO640E-4B256C
Lattice Semiconductor Corporation
10AX090U4F45E3LG
Intel
EP4SGX180DF29C2X
Intel