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Toshiba Semiconductor and Storage GT10J312(Q)

Name: GT10J312(Q)
Brand: Toshiba Semiconductor and Storage
SKU: GT10J312(Q)
Availability: InStock
Rating: 4.8 (109 reviews)

MFG Part Number: GT10J312(Q)

Available Quantity: 95310 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: - IGBT 600V 10A 60W TO220SM

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - IGBTs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: GT10J312(Q).pdf

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GT10J312(Q) Specifications

Manufacturer Part Number	GT10J312(Q)
Future Part Number	FT-GT10J312(Q)
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	-
GT10J312(Q) Status (Lifecycle)	In Stock
Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	10A
Current - Collector Pulsed (Icm)	20A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	60W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	400ns/400ns
Test Condition	300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)	200ns
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-220SM
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
GT10J312(Q) Weight	Contact Us
Replacement Part Number	GT10J312(Q)-FT

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