Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N6351
Manufacturer Part Number | JAN2N6351 |
---|---|
Future Part Number | FT-JAN2N6351 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/472 |
JAN2N6351 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AC, TO-33-4 Metal Can |
Supplier Device Package | TO-33 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N6351 Weight | Contact Us |
Replacement Part Number | JAN2N6351-FT |
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