Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N3637L
Manufacturer Part Number | JANTXV2N3637L |
---|---|
Future Part Number | FT-JANTXV2N3637L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/357 |
JANTXV2N3637L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N3637L Weight | Contact Us |
Replacement Part Number | JANTXV2N3637L-FT |
BC849BW RFG
Taiwan Semiconductor Corporation
BC849CW RFG
Taiwan Semiconductor Corporation
BC850AW RFG
Taiwan Semiconductor Corporation
BC850BW RFG
Taiwan Semiconductor Corporation
BC850CW RFG
Taiwan Semiconductor Corporation
2SA1303
Sanken
2SB1420
Sanken
2SC3284
Sanken
2SC3927
Sanken
2SC4706
Sanken
XC3164A-3TQ144C
Xilinx Inc.
LCMXO1200C-3T144I
Lattice Semiconductor Corporation
XA7A25T-2CSG325I
Xilinx Inc.
M1A3P600-PQ208
Microsemi Corporation
5SEE9F45C2N
Intel
EP2SGX90EF1152C4ES
Intel
XC2V1500-5BGG575C
Xilinx Inc.
XC5VLX110-2FF1760C
Xilinx Inc.
LCMXO2-2000HC-5MG132C
Lattice Semiconductor Corporation
EP2AGX190EF29C5N
Intel