Home / Products / Integrated Circuits (ICs) / Memory / M95512-DRDW3TP/K
Manufacturer Part Number | M95512-DRDW3TP/K |
---|---|
Future Part Number | FT-M95512-DRDW3TP/K |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q100 |
M95512-DRDW3TP/K Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM |
Memory Size | 512Kb (64K x 8) |
Clock Frequency | 16MHz |
Write Cycle Time - Word, Page | 4ms |
Access Time | - |
Memory Interface | SPI |
Voltage - Supply | 1.8V ~ 5.5V |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
M95512-DRDW3TP/K Weight | Contact Us |
Replacement Part Number | M95512-DRDW3TP/K-FT |
N25Q064A13EF640FN02 TR
Micron Technology Inc.
N25Q064A13EF840E
Micron Technology Inc.
N25Q064A13EF840F TR
Micron Technology Inc.
N25Q064A13EF8A0E
Micron Technology Inc.
N25Q064A13EF8A0F TR
Micron Technology Inc.
N25Q064A13EF8H0E
Micron Technology Inc.
N25Q064A13EF8H0F TR
Micron Technology Inc.
N25Q064A13EW7D0E
Micron Technology Inc.
N25Q064A13EW9D0E
Micron Technology Inc.
N25Q128A11BF840F TR
Micron Technology Inc.
A1010B-VQG80C
Microsemi Corporation
XC3S1600E-4FG400I
Xilinx Inc.
XC3S5000-5FGG900C
Xilinx Inc.
M1A3P600L-FGG484
Microsemi Corporation
APA300-BG456
Microsemi Corporation
A40MX02-PL68
Microsemi Corporation
EP3SL150F1152I4
Intel
XC4010E-3PC84I
Xilinx Inc.
XC2VP50-7FFG1152C
Xilinx Inc.
EP1C20F324C6
Intel