Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / MC1413DR2G
Manufacturer Part Number | MC1413DR2G |
---|---|
Future Part Number | FT-MC1413DR2G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MC1413DR2G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 7 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 16-SOIC |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MC1413DR2G Weight | Contact Us |
Replacement Part Number | MC1413DR2G-FT |
BC846UPNE6327HTSA1
Infineon Technologies
BC856UE6327HTSA1
Infineon Technologies
HN1A01F-GR(TE85L,F
Toshiba Semiconductor and Storage
HN1B01F-GR(TE85L,F
Toshiba Semiconductor and Storage
HN1B01FDW1T1
ON Semiconductor
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage
IMT17T110
Rohm Semiconductor
IMT17T208
Rohm Semiconductor
IMT1AT108
Rohm Semiconductor
IMT3AT108
Rohm Semiconductor
EPF10K30ETC144-1N
Intel
A1020B-PQ100I
Microsemi Corporation
XC2V80-5FGG256C
Xilinx Inc.
XC6SLX75T-3FGG676C
Xilinx Inc.
M2GL025TS-FCSG325I
Microsemi Corporation
A54SX08-2VQ100
Microsemi Corporation
10M04DAF256A7G
Intel
5SGXEB5R2F43I3LN
Intel
XC4VFX60-10FF672C
Xilinx Inc.
LCMXO2-2000HC-4MG132I
Lattice Semiconductor Corporation