Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD253-1G
Manufacturer Part Number | MJD253-1G |
---|---|
Future Part Number | FT-MJD253-1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MJD253-1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
Power - Max | 1.4W |
Frequency - Transition | 40MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | I-PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MJD253-1G Weight | Contact Us |
Replacement Part Number | MJD253-1G-FT |
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