Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MMBTH81_F080
Manufacturer Part Number | MMBTH81_F080 |
---|---|
Future Part Number | FT-MMBTH81_F080 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MMBTH81_F080 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Frequency - Transition | 600MHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMBTH81_F080 Weight | Contact Us |
Replacement Part Number | MMBTH81_F080-FT |
61070
Microsemi Corporation
61074
Microsemi Corporation
61110
Microsemi Corporation
61111
Microsemi Corporation
62012T
Microsemi Corporation
62028
Microsemi Corporation
62089
Microsemi Corporation
62090
Microsemi Corporation
62091
Microsemi Corporation
62144
Microsemi Corporation
XC3S400-4PQG208I
Xilinx Inc.
XA3S400-4FGG456I
Xilinx Inc.
APA150-FG256
Microsemi Corporation
EP1SGX10CF672C7
Intel
EP20K200CF672C8
Intel
XC5VLX110T-2FF1136C
Xilinx Inc.
LFXP2-17E-6QN208C
Lattice Semiconductor Corporation
5CEBA7U19C7N
Intel
EPF10K50SQC208-1
Intel
5SGSMD3H2F35C2LN
Intel