Home / Products / Integrated Circuits (ICs) / Memory / MT29F512G08EMCBBJ5-6:B.001
Manufacturer Part Number | MT29F512G08EMCBBJ5-6:B.001 |
---|---|
Future Part Number | FT-MT29F512G08EMCBBJ5-6:B.001 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F512G08EMCBBJ5-6:B.001 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 512Gb (64G x 8) |
Clock Frequency | 167MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F512G08EMCBBJ5-6:B.001 Weight | Contact Us |
Replacement Part Number | MT29F512G08EMCBBJ5-6:B.001-FT |
MT29F4G16ABAFAWP-ITES:F
Micron Technology Inc.
MT29F4G16ABAFAWP-ITES:F TR
Micron Technology Inc.
MT29F4G16ABBDAH4:D TR
Micron Technology Inc.
MT29F4G16ABBDAHC:D
Micron Technology Inc.
MT29F4G16ABBDAM60A3WC1
Micron Technology Inc.
MT29F4G16ABBEAH4-IT:E
Micron Technology Inc.
MT29F4G16ABBEAH4-IT:E TR
Micron Technology Inc.
MT29F4G16ABBEAH4:E
Micron Technology Inc.
MT29F4G16ABBEAH4:E TR
Micron Technology Inc.
MT29F4G16ABBFAH4-AATES:F
Micron Technology Inc.
EP2C5T144C7
Intel
XCV600-6FG676C
Xilinx Inc.
EP4CGX110CF23I7N
Intel
10M04SFE144C8G
Intel
EP3SL110F1152I4LN
Intel
A42MX16-FPQ100
Microsemi Corporation
LCMXO2-7000HE-4FTG256I
Lattice Semiconductor Corporation
LFE3-95E-7FN484C
Lattice Semiconductor Corporation
EP4SGX230DF29C2X
Intel
EPF81500ARC240-3
Intel