Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSB9435T1G
Manufacturer Part Number | NSB9435T1G |
---|---|
Future Part Number | FT-NSB9435T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSB9435T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 110MHz |
Power - Max | 720mW |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSB9435T1G Weight | Contact Us |
Replacement Part Number | NSB9435T1G-FT |
SMUN5111T1G
ON Semiconductor
SMUN5114T3G
ON Semiconductor
SMUN5214T1G
ON Semiconductor
SMUN5215T1G
ON Semiconductor
SMUN5232T1G
ON Semiconductor
MUN5113T1
ON Semiconductor
MUN5114T1
ON Semiconductor
MUN5115T1
ON Semiconductor
MUN5116T1
ON Semiconductor
MUN5131T1
ON Semiconductor
AGL400V5-FG256I
Microsemi Corporation
M2GL005-1VFG256I
Microsemi Corporation
ICE40LM1K-SWG25TR
Lattice Semiconductor Corporation
A3PN250-VQ100
Microsemi Corporation
EP4CGX150DF27C7N
Intel
5SGXEA4K1F40C1N
Intel
LFE2-12E-6F256C
Lattice Semiconductor Corporation
LFE2-20E-6F484I
Lattice Semiconductor Corporation
10AX115R3F40E2LG
Intel
EP2AGX45DF29I3N
Intel