Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / R5011ANX
Manufacturer Part Number | R5011ANX |
---|---|
Future Part Number | FT-R5011ANX |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
R5011ANX Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
R5011ANX Weight | Contact Us |
Replacement Part Number | R5011ANX-FT |
TK6P53D(T6RSS-Q)
Toshiba Semiconductor and Storage
TK7P50D(T6RSS-Q)
Toshiba Semiconductor and Storage
TK80S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage
TK80S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage
TK8S06K3L(T6L1,NQ)
Toshiba Semiconductor and Storage
IRFI4110GPBF
Infineon Technologies
IRLI530NPBF
Infineon Technologies
IRFI4321PBF
Infineon Technologies
IRLI2910PBF
Infineon Technologies
IRLI520NPBF
Infineon Technologies
LCMXO2-1200ZE-2TG144I
Lattice Semiconductor Corporation
XC3S1400AN-4FGG484C
Xilinx Inc.
10M08DCF484C8G
Intel
5SGXMB5R3F43C3N
Intel
5SGXMA7H3F35I3
Intel
LCMXO2280E-3B256C
Lattice Semiconductor Corporation
LCMXO2-4000ZE-1FTG256C
Lattice Semiconductor Corporation
5AGTFC7H3F35I3G
Intel
EP1C4F400C8
Intel
EP20K200EBC356-1
Intel