Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2105CT(TPL3)
Manufacturer Part Number | RN2105CT(TPL3) |
---|---|
Future Part Number | FT-RN2105CT(TPL3) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2105CT(TPL3) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2105CT(TPL3) Weight | Contact Us |
Replacement Part Number | RN2105CT(TPL3)-FT |
RN1109,LF(CT
Toshiba Semiconductor and Storage
RN1110,LF(CT
Toshiba Semiconductor and Storage
RN1111,LF(CT
Toshiba Semiconductor and Storage
RN1115,LF(CT
Toshiba Semiconductor and Storage
RN2102,LF(CT
Toshiba Semiconductor and Storage
RN2107,LF(CT
Toshiba Semiconductor and Storage
RN2110,LF(CT
Toshiba Semiconductor and Storage
RN2111,LF(CT
Toshiba Semiconductor and Storage
RN2114(TE85L,F)
Toshiba Semiconductor and Storage
RN2115,LF(CT
Toshiba Semiconductor and Storage
A1425A-PQG100C
Microsemi Corporation
XC3S200-5PQ208C
Xilinx Inc.
APA300-CQ352B
Microsemi Corporation
A54SX08A-PQ208
Microsemi Corporation
A54SX08A-PQ208A
Microsemi Corporation
EP4CGX110DF27C8
Intel
10M04DCF256C7G
Intel
5SGXEA3K2F35I3L
Intel
LFXP3C-3QN208I
Lattice Semiconductor Corporation
LCMXO2280C-4FTN324I
Lattice Semiconductor Corporation