Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RQJ0303PGDQA#H6
Manufacturer Part Number | RQJ0303PGDQA#H6 |
---|---|
Future Part Number | FT-RQJ0303PGDQA#H6 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RQJ0303PGDQA#H6 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 68 mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-MPAK |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQJ0303PGDQA#H6 Weight | Contact Us |
Replacement Part Number | RQJ0303PGDQA#H6-FT |
BSS119 E6433
Infineon Technologies
BSS119 E7796
Infineon Technologies
BSS119 E7978
Infineon Technologies
BSS119E6327
Infineon Technologies
BSS119L6327HTSA1
Infineon Technologies
BSS119L6433HTMA1
Infineon Technologies
BSS123 E6433
Infineon Technologies
BSS123E6327
Infineon Technologies
BSS123L6327HTSA1
Infineon Technologies
BSS123L6433HTMA1
Infineon Technologies
XC3S500E-4PQ208I
Xilinx Inc.
5SGSMD5K2F40C2L
Intel
LCMXO2-7000HC-4BG332C
Lattice Semiconductor Corporation
LCMXO2-7000HE-4BG332C
Lattice Semiconductor Corporation
LFE3-95EA-6FN672I
Lattice Semiconductor Corporation
LFE3-35EA-8FN484I
Lattice Semiconductor Corporation
LCMXO3L-4300E-6MG121I
Lattice Semiconductor Corporation
5CEFA4U19A7N
Intel
EPF10K20RC240-3N
Intel
EP20K1000EFC33-3
Intel