Manufacturer Part Number | S6Q |
---|---|
Future Part Number | FT-S6Q |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
S6Q Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 6A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 6A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 100V |
Capacitance @ Vr, F | - |
Mounting Type | Chassis, Stud Mount |
Package / Case | DO-203AA, DO-4, Stud |
Supplier Device Package | DO-4 |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
S6Q Weight | Contact Us |
Replacement Part Number | S6Q-FT |
NSR0630P2T5G
ON Semiconductor
RURP15100-F085P
ON Semiconductor
S12BR
GeneSiC Semiconductor
S12DR
GeneSiC Semiconductor
S12G
GeneSiC Semiconductor
S12GR
GeneSiC Semiconductor
S12J
GeneSiC Semiconductor
S12JR
GeneSiC Semiconductor
S12K
GeneSiC Semiconductor
S12KR
GeneSiC Semiconductor
A3P125-2PQ208I
Microsemi Corporation
EP3SL50F484I4N
Intel
10M16DAF256I7G
Intel
EP1K30FC256-2N
Intel
EP3SE80F1152C2
Intel
XC7K160T-2FF676C
Xilinx Inc.
AGLP060V2-CS289
Microsemi Corporation
LFXP2-5E-5QN208C
Lattice Semiconductor Corporation
LCMXO640C-3BN256I
Lattice Semiconductor Corporation
5AGXMA3D4F31I3G
Intel