Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8457DB-T1-E1
Manufacturer Part Number | SI8457DB-T1-E1 |
---|---|
Future Part Number | FT-SI8457DB-T1-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8457DB-T1-E1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-MICRO FOOT® (1.6x1.6) |
Package / Case | 4-UFBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8457DB-T1-E1 Weight | Contact Us |
Replacement Part Number | SI8457DB-T1-E1-FT |
SI3430DV-T1-GE3
Vishay Siliconix
SI3433BDV-T1-E3
Vishay Siliconix
SI3433BDV-T1-GE3
Vishay Siliconix
SI3433CDV-T1-E3
Vishay Siliconix
SI3434DV-T1-E3
Vishay Siliconix
SI3434DV-T1-GE3
Vishay Siliconix
SI3438DV-T1-E3
Vishay Siliconix
SI3438DV-T1-GE3
Vishay Siliconix
SI3440ADV-T1-GE3
Vishay Siliconix
SI3441BDV-T1-E3
Vishay Siliconix
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel