Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIA437DJ-T1-GE3
Manufacturer Part Number | SIA437DJ-T1-GE3 |
---|---|
Future Part Number | FT-SIA437DJ-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SIA437DJ-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 29.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA437DJ-T1-GE3 Weight | Contact Us |
Replacement Part Number | SIA437DJ-T1-GE3-FT |
SQ4431EY-T1_GE3
Vishay Siliconix
SQ4470EY-T1_GE3
Vishay Siliconix
SQ4840EY-T1_GE3
Vishay Siliconix
SQ4850EY-T1_GE3
Vishay Siliconix
SQ9407EY-T1_GE3
Vishay Siliconix
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage
TPC8018-H(TE12LQM)
Toshiba Semiconductor and Storage
TPC8021-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8022-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage
XC4005XL-2PQ100I
Xilinx Inc.
XC2VP4-5FG456C
Xilinx Inc.
EPF10K100AFC484-3
Intel
EP4CE10F17C8L
Intel
EP2AGX95DF25C6
Intel
XC6VLX240T-1FF1156C
Xilinx Inc.
XC4VFX40-10FF672C
Xilinx Inc.
XC2V8000-4FFG1152C
Xilinx Inc.
LFXP2-30E-5FT256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4BG256I
Lattice Semiconductor Corporation