Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIS782DN-T1-GE3
Manufacturer Part Number | SIS782DN-T1-GE3 |
---|---|
Future Part Number | FT-SIS782DN-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SIS782DN-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1025pF @ 15V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 41W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Package / Case | PowerPAK® 1212-8 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIS782DN-T1-GE3 Weight | Contact Us |
Replacement Part Number | SIS782DN-T1-GE3-FT |
SIA448DJ-T1-GE3
Vishay Siliconix
SIA450DJ-T1-E3
Vishay Siliconix
SIA450DJ-T1-GE3
Vishay Siliconix
SIA453EDJ-T1-GE3
Vishay Siliconix
SIA456DJ-T1-GE3
Vishay Siliconix
SIA462DJ-T1-GE3
Vishay Siliconix
SIA467EDJ-T1-GE3
Vishay Siliconix
SIA477EDJ-T1-GE3
Vishay Siliconix
SIA477EDJT-T1-GE3
Vishay Siliconix
SQA401EEJ-T1_GE3
Vishay Siliconix
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel