Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK8A60DA(STA4,Q,M)
Manufacturer Part Number | TK8A60DA(STA4,Q,M) |
---|---|
Future Part Number | FT-TK8A60DA(STA4,Q,M) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | π-MOSVII |
TK8A60DA(STA4,Q,M) Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK8A60DA(STA4,Q,M) Weight | Contact Us |
Replacement Part Number | TK8A60DA(STA4,Q,M)-FT |
TK40E06N1,S1X
Toshiba Semiconductor and Storage
TK34E10N1,S1X
Toshiba Semiconductor and Storage
TK22E10N1,S1X
Toshiba Semiconductor and Storage
TK40E10N1,S1X
Toshiba Semiconductor and Storage
TK72E08N1,S1X
Toshiba Semiconductor and Storage
TK16E60W,S1VX
Toshiba Semiconductor and Storage
TK30E06N1,S1X
Toshiba Semiconductor and Storage
TK58E06N1,S1X
Toshiba Semiconductor and Storage
TK14E65W,S1X
Toshiba Semiconductor and Storage
TK10E60W,S1VX
Toshiba Semiconductor and Storage
EX64-TQ100I
Microsemi Corporation
M2GL090T-FCSG325I
Microsemi Corporation
M1AFS600-2FG256I
Microsemi Corporation
5SGXMA7N2F40I3N
Intel
XCS05-3PC84C
Xilinx Inc.
XC2V4000-5FFG1152I
Xilinx Inc.
AGL600V5-FGG144
Microsemi Corporation
EP3SL150F780C4LN
Intel
EPF10K30RC240-4N
Intel
EP1S60F1020C5N
Intel