Home / Products / Circuit Protection / TVS - Diodes / TPD1E10B06DPYT
Manufacturer Part Number | TPD1E10B06DPYT |
---|---|
Future Part Number | FT-TPD1E10B06DPYT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TPD1E10B06DPYT Status (Lifecycle) | In Stock |
Part Status | Active |
Type | Zener |
Unidirectional Channels | - |
Bidirectional Channels | 1 |
Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
Voltage - Breakdown (Min) | 6V |
Voltage - Clamping (Max) @ Ipp | 14V |
Current - Peak Pulse (10/1000µs) | 5A (8/20µs) |
Power - Peak Pulse | 90W |
Power Line Protection | No |
Applications | General Purpose |
Capacitance @ Frequency | - |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 0402 (1006 Metric) |
Supplier Device Package | 2-X1SON (1x.60) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD1E10B06DPYT Weight | Contact Us |
Replacement Part Number | TPD1E10B06DPYT-FT |
DF2S8.2FS,L3M
Toshiba Semiconductor and Storage
DF2B6.8ACT,L3F
Toshiba Semiconductor and Storage
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
SMP3022-01ETGTR
SMC Diode Solutions
DF2B6.8M1ACT,L3F
Toshiba Semiconductor and Storage
DF2B6M4CT,L3F
Toshiba Semiconductor and Storage
DF2B7ACT,L3F
Toshiba Semiconductor and Storage
DF2S16CT,L3F
Toshiba Semiconductor and Storage
DF2S30CT,L3F
Toshiba Semiconductor and Storage
DF2S6M4CT,L3F
Toshiba Semiconductor and Storage
A40MX02-2VQG80I
Microsemi Corporation
A1010B-2PQ100C
Microsemi Corporation
AGLN060V2-VQG100I
Microsemi Corporation
EP4CE22E22C8L
Intel
EP4SGX530KH40C3
Intel
5SGXEA7H3F35I3N
Intel
A40MX02-PLG44
Microsemi Corporation
LCMXO640C-5B256C
Lattice Semiconductor Corporation
EP2AGX190FF35I3N
Intel
HC20K600BC652
Intel