Home / Products / Circuit Protection / TVS - Diodes / TPD1E10B06QDPYRQ1
Manufacturer Part Number | TPD1E10B06QDPYRQ1 |
---|---|
Future Part Number | FT-TPD1E10B06QDPYRQ1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
TPD1E10B06QDPYRQ1 Status (Lifecycle) | In Stock |
Part Status | Active |
Type | Zener |
Unidirectional Channels | - |
Bidirectional Channels | 1 |
Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
Voltage - Breakdown (Min) | 6V |
Voltage - Clamping (Max) @ Ipp | 14V (Typ) |
Current - Peak Pulse (10/1000µs) | 6A (8/20µs) |
Power - Peak Pulse | 90W |
Power Line Protection | No |
Applications | Automotive |
Capacitance @ Frequency | 12pF @ 1MHz |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 0402 (1006 Metric) |
Supplier Device Package | 2-X1SON (1x.60) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD1E10B06QDPYRQ1 Weight | Contact Us |
Replacement Part Number | TPD1E10B06QDPYRQ1-FT |
DF2S6.8UCT(TPL3)
Toshiba Semiconductor and Storage
DF2S12FU,H3F
Toshiba Semiconductor and Storage
DF2B7AE,H3F
Toshiba Semiconductor and Storage
DF2B6.8E,L3F
Toshiba Semiconductor and Storage
DF3D6.8MS,LF
Toshiba Semiconductor and Storage
DF3D36FU,LF
Toshiba Semiconductor and Storage
DF3A3.6FU(TE85L,F)
Toshiba Semiconductor and Storage
DF3A6.8LFU,LF
Toshiba Semiconductor and Storage
DF3A6.8LSU,LF
Toshiba Semiconductor and Storage
DF3A5.6LFU,LF
Toshiba Semiconductor and Storage
LCMXO640E-4TN100C
Lattice Semiconductor Corporation
AFS250-FG256I
Microsemi Corporation
LFE2M70SE-5FN1152I
Lattice Semiconductor Corporation
AGL030V5-VQG100I
Microsemi Corporation
5CGXFC4F6M11C7N
Intel
XC4VFX40-10FFG672C
Xilinx Inc.
AX500-2FG676I
Microsemi Corporation
LFE2M50SE-6F900C
Lattice Semiconductor Corporation
EPF10K30AQI208-3N
Intel
EP4SGX110HF35I3
Intel