Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM210N06CZ C0G
Manufacturer Part Number | TSM210N06CZ C0G |
---|---|
Future Part Number | FT-TSM210N06CZ C0G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TSM210N06CZ C0G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TSM210N06CZ C0G Weight | Contact Us |
Replacement Part Number | TSM210N06CZ C0G-FT |
IRLD014
Vishay Siliconix
IRLD024
Vishay Siliconix
IRLD110
Vishay Siliconix
IRLD120
Vishay Siliconix
TSM60NB1R4CH C5G
Taiwan Semiconductor Corporation
TSM4NB65CH C5G
Taiwan Semiconductor Corporation
TSM60NB900CH C5G
Taiwan Semiconductor Corporation
TSM60NB600CH C5G
Taiwan Semiconductor Corporation
TSM70N1R4CH C5G
Taiwan Semiconductor Corporation
TSM70N900CH C5G
Taiwan Semiconductor Corporation
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel